收藏本站
MegaMOS TM FET
IXTH 14N80
V DSS
= 800 V
I D25
= 14 A
R DS(on) = 0.70 ?
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
TO-247 AD
V DSS
V DGR
V GS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
800
800
± 20
V
V
V
V GSM
I D25
I DM
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
± 30
14
56
V
A
A
D (TAB)
P D
T J
T C = 25 ° C
300
-55 ... +150
W
° C
G = Gate,
S = Source,
D = Drain,
TAB = Drain
T JM
T stg
Max. lead temperature for soldering 300
1.6 mm (0.063 in) from case for 10 s
150
-55 ... +150
° C
° C
° C
M d
Mounting torque
1.13/10 Nm/lb.in.
Features
Weight
6
g
International standard package
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
Switch-mode and resonant-mode
power supplies
V DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 3 mA
V DS = V GS , I D = 250 μ A
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
800
2
4.5
± 100
250
1
V
V
nA
μ A
mA
Motor control
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
Easy to mount with 1 screw
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
0.7
?
(isolated mounting screw hole)
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions ..
? 2000 IXYS All rights reserved
96518F(12/97)
1-4
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXTH150N17T MOSFET N-CH 175V 150A TO-247
IXTH152N085T MOSFET N-CH 85V 152A TO-247
IXTH15N50L2 MOSFET N-CH 15A 500V TO-247
IXTH160N075T MOSFET N-CH 75V 160A TO-247
IXTH160N15T MOSFET N-CH 150V 160A TO-247
IXTH16P20 MOSFET P-CH 200V 16A TO-247
IXTH180N10T MOSFET N-CH 100V 180A TO-247
IXTH182N055T MOSFET N-CH 55V 182A TO-247
相关代理商/技术参数
IXTH150N17T 功能描述:MOSFET 150 Amps 17V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH152N085T 功能描述:MOSFET 152 Amps 85V 6.6 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH15N35MA 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 15A I(D) | TO-247(5)
IXTH15N35MB 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 15A I(D) | TO-247(5)
IXTH15N40MA 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 15A I(D) | TO-247(5)
IXTH15N40MB 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 15A I(D) | TO-247(5)
IXTH15N45A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 15A I(D) | TO-247
IXTH15N50A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-247